Find link

language:

Find link is a tool written by Edward Betts.

searching for Electron mobility 81 found (180 total)

High-electron-mobility transistor (2,576 words) [view diff] no match in snippet view article find links to article

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor

Aluminium gallium nitride (282 words) [view diff] no match in snippet view article find links to article

used in detectors of ultraviolet radiation, and in AlGaN/GaN High-electron-mobility transistors. AlGaN is often used together with gallium nitride or

Spin gapless semiconductor (601 words) [view diff] exact match in snippet view article find links to article

major category of SGS are parabolic spin gapless semiconductors. Electron mobility in such materials is two to four orders of magnitude higher than in

Monolithic microwave integrated circuit (430 words) [view diff] no match in snippet view article find links to article

field-effect transistors (MESFETs) as the active device. More recently high-electron-mobility transistor (HEMTs), pseudomorphic HEMTs and heterojunction bipolar

Satoshi Hiyamizu (240 words) [view diff] exact match in snippet view article find links to article

IEEE Fellow "for contributions to the realization of the first high electron mobility transistor (HEMT)". He served as dean of the Osaka University Graduate

Indium aluminium nitride (589 words) [view diff] no match in snippet view article find links to article

particular interest to areas such as the space industry. InAlN high-electron-mobility transistors (HEMTs) are attractive candidates for such applications

Kei May Lau (253 words) [view diff] no match in snippet view article find links to article

a semiconductor engineer whose research topics have included high-electron-mobility transistors, light-emitting diodes, and laser diodes. She is Fang

Graphene plasmonics (1,499 words) [view diff] exact match in snippet view article find links to article

counterparts. The most prominent advantages are known to be their high electron mobility and high mechanical strengths. Thus, it exhibits potential for applications

April Brown (563 words) [view diff] no match in snippet view article find links to article

nanoscale droplets. She is also known for her work on the design of high-electron-mobility transistors and on nanoscale fabrication using molecular-beam epitaxy

Hybrid solar cell (4,458 words) [view diff] exact match in snippet view article find links to article

electron transfer from the CdSe to the polymer. CdSe also has a high electron mobility (600 cm2·V−1·s−1). The highest demonstrated efficiency is 3.2%, based

Oxide thin-film transistor (973 words) [view diff] exact match in snippet view article find links to article

the electron mobility is roughly 100 times higher in oxide TFTs. Because the source-drain current in transistors is linearly proportional to electron mobility

MESFET (457 words) [view diff] exact match in snippet view article find links to article

output stage of microwave links, and as a power oscillator. High electron mobility transistor (HEMT) Heterojunction bipolar transistor Lepkowski, W.;

Heterojunction bipolar transistor (745 words) [view diff] no match in snippet view article find links to article

such as analog-to-digital and digital-to-analog converters. High-electron-mobility transistor (HEMT) MESFET W. Shockley: 'Circuit Element Utilizing Semiconductive

Stanley Shanfield (952 words) [view diff] exact match in snippet view article find links to article

Laboratory Manager, overseeing the invention of a pseudomorphic high electron mobility transistor. In 1996 he became Manager, Semiconductor Operations, a

Molecular-beam epitaxy (1,528 words) [view diff] no match in snippet view article find links to article

Metalorganic vapour phase epitaxy Colin P. Flynn Arthur Gossard High-electron-mobility transistor (HEMT) Heterojunction bipolar transistor Herbert Kroemer

Trimethylborane (902 words) [view diff] case mismatch in snippet view article find links to article

Wittig in 1958 Ferguson, G. A. Jr; Jablonski, F. E. (2004-12-29). "Electron Mobility in Boron Trimethyl". Review of Scientific Instruments. 28 (11): 893

Field-effect transistor (5,968 words) [view diff] no match in snippet view article find links to article

The MODFET (modulation-doped field-effect transistor) is a high-electron-mobility transistor using a quantum well structure formed by graded doping

Boron arsenide (1,358 words) [view diff] exact match in snippet view article find links to article

hole mobility, >1000 cm2/V/second, unlike silicon which has high electron mobility, but low hole mobility. In 2023, a study in journal Nature reported

Mean free path (2,378 words) [view diff] exact match in snippet view article find links to article

scattering much more noticeable, effectively increasing the resistivity. Electron mobility through a medium with dimensions smaller than the mean free path of

Low-noise amplifier (1,059 words) [view diff] no match in snippet view article find links to article

stage. Therefore, junction field-effect transistors (JFETs) and high-electron-mobility transistors (HEMTs) are often used. They are driven in a high-current

Bradbury–Nielsen shutter (523 words) [view diff] case mismatch in snippet view article find links to article

Norris E. Bradbury & Russel A. Nielsen (1936). "Absolute Values of the Electron Mobility in Hydrogen". Physical Review. 49 (5): 388–93. Bibcode:1936PhRv..

Electronic component (2,703 words) [view diff] no match in snippet view article find links to article

induction transistor) MESFET (metal semiconductor FET) HEMT (high-electron-mobility transistor) Composite transistors BiCMOS (bipolar CMOS) IGBT (Insulated-gate

Platinum diselenide (1,531 words) [view diff] no match in snippet view article find links to article

Zheng; Wang, Xinran; Ji, Wei; Chai, Yang (February 2017). "High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs". Advanced Materials. 29 (5):

Christopher Snowden (3,526 words) [view diff] exact match in snippet view article find links to article

volume manufacturing. Snowden went on to apply this technique to high electron mobility transistors (HEMTs), between 1995 and 2005 utilizing highly effective

Aluminium gallium antimonide (739 words) [view diff] no match in snippet view article find links to article

incorporated into devices such as heterojunction bipolar and high-electron-mobility transistors, resonant-tunneling diodes, solar cells, short-wave infrared

Einstein relation (kinetic theory) (1,938 words) [view diff] exact match in snippet view article

(V). For the case of Fermi gas or a Fermi liquid, relevant for the electron mobility in normal metals like in the free electron model, Einstein relation

Euroradar CAPTOR (5,759 words) [view diff] case mismatch in snippet view article find links to article

the T/R modules are made with GaAs HEMT HPA (gallium arsenide High Electron Mobility Transistor High Power Amplifiers) Captor-E ECRS Mk1: Interface and

Material properties of diamond (5,525 words) [view diff] exact match in snippet view article find links to article

silicon-based technology in high-temperature, high-frequency or high-electron mobility applications. FETs with SiN dielectric layers, and SC-FETs have been

IQE (874 words) [view diff] exact match in snippet view article find links to article

specialised in a number of wireless products including pseudomorphic high electron mobility transistors (pHEMTs) and metal semiconductor field-effect transistors

Transparent conducting film (4,546 words) [view diff] exact match in snippet view article find links to article

dopants in indium oxide, particularly molybdenum, give much higher electron mobility and conductivity than obtained with tin and Ta is a promising alternative

Cadmium telluride (1,422 words) [view diff] exact match in snippet view article find links to article

and x-ray detectors are high atomic number, large bandgap and high electron mobility ~1100 cm2/V·s, which result in high intrinsic μτ (mobility-lifetime)

Semiconductor package (1,651 words) [view diff] case mismatch in snippet view article find links to article

Keyan Bennaceur, Nature.com. “Mechanical Flip-Chip for Ultra-High Electron Mobility Devices.” September 22, 2015. April 23, 2015. Michael Pecht (ed) Integrated

Newton Aycliffe (2,186 words) [view diff] no match in snippet view article find links to article

business to RFMD in 2007. The plant uses pHEMT technologies (High-electron-mobility transistor), using Gallium arsenide (GaAs) and Gallium nitride (GaN)

Schottky barrier (2,091 words) [view diff] no match in snippet view article find links to article

provides the depletion region). A variant of this device is the high-electron-mobility transistor (HEMT), which also utilizes a heterojunction to provide

Organic solar cell (13,557 words) [view diff] exact match in snippet view article find links to article

distribution on P3HT:PCBM solar cells was shown to cause problems with electron mobility which ends up with the yielding of very poor device efficiencies.

Distributed amplifier (1,521 words) [view diff] exact match in snippet view article find links to article

have superior performance resulting from higher bandgaps (higher electron mobility), higher saturated electron velocity, higher breakdown voltages and

Fermi level (3,211 words) [view diff] no match in snippet view article find links to article

Example of variations in conduction band edge EC in a band diagram of GaAs/AlGaAs heterojunction-based high-electron-mobility transistor.

Norris Bradbury (2,734 words) [view diff] case mismatch in snippet view article find links to article

E. Bradbury and Russel A. Nielsen (1936). "Absolute Values of the Electron Mobility in Hydrogen". Physical Review. 49 (5): 388–93. Bibcode:1936PhRv..

Degree Angular Scale Interferometer (2,109 words) [view diff] no match in snippet view article find links to article

crosstalk between the antennae. Each of the telescopes had a high-electron-mobility transistor (HEMT) amplifier working at the frequencies 26–36 GHz (Ka

Diffusion current (1,420 words) [view diff] exact match in snippet view article find links to article

number density), q is the magnitude of charge of an electron, μ is electron mobility in the medium, and E = −dΦ/dx (Φ potential difference) is the electric

High-field domain (1,820 words) [view diff] exact match in snippet view article find links to article

measure the electron density in the field quenched branch and of the electron mobility as a function of the temperature The high-field domain is determined

Alec Broers, Baron Broers (2,370 words) [view diff] exact match in snippet view article find links to article

Hove, M. (1993). "Scaling behavior of delta-doped AlGaAs/InGaAs high electron mobility transistors with gatelengths down to 60 nm and source-drain gaps down

Kyoto Prize in Advanced Technology (557 words) [view diff] case mismatch in snippet view article find links to article

Miniaturization 2017 Takashi Mimura [de] Japan born 1944 Invention of the High Electron Mobility Transistor (HEMT) and Its Development for the Progress of Information

Photonic integrated circuit (2,905 words) [view diff] exact match in snippet view article find links to article

planar light wave circuits (PLCs). Gallium arsenide (GaAS) has high electron mobility. This means GaAS transistors operate at high speeds, making them ideal

Indium (5,599 words) [view diff] no match in snippet view article find links to article

(2019-01-01), Kaushik, Brajesh Kumar (ed.), "Chapter 3 - InP-Based High-Electron-Mobility Transistors for High-Frequency Applications", Nanoelectronics, Advanced

Scanning joule expansion microscopy (2,760 words) [view diff] exact match in snippet view article find links to article

Possible materials and devices for thermal mapping include high electron mobility transistors, nanotubes, nanowires, graphene sheets, nanomeshes, and

Jerry Woodall (1,768 words) [view diff] exact match in snippet view article find links to article

of heterojunction bipolar transistors (HBT) and pseudomorphic high electron mobility transistors (P-HEMT). Due to their compact size and high speed, these

Planck (spacecraft) (3,043 words) [view diff] no match in snippet view article

infrared regions of the electromagnetic spectrum. The detectors use high-electron-mobility transistors. The HFI was sensitive between 100 and 857 GHz, using

Electronic oscillator (6,588 words) [view diff] exact match in snippet view article find links to article

Gunn diode, fundamental mode ~100 GHz Magnetron tube ~100 GHz High electron mobility transistor (HEMT) ~200 GHz Klystron tube ~200 GHz Gunn diode, harmonic

Silver (11,249 words) [view diff] exact match in snippet view article find links to article

interactions (which occur in the preceding transition metals) lower electron mobility. The thermal conductivity of silver is among the highest of all materials

Wilkinson Microwave Anisotropy Probe (4,509 words) [view diff] no match in snippet view article find links to article

difference between two telescope beams. The signal is amplified with High-electron-mobility transistor (HEMT) low-noise amplifiers, built by the National Radio

Moore's law (11,219 words) [view diff] exact match in snippet view article find links to article

sub-50 nm graphene layers, as its resistivity value increases and thus electron mobility decreases. In April 2005, Gordon Moore stated in an interview that

Geometric diode (1,690 words) [view diff] exact match in snippet view article find links to article

Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. (2008-06-01). "Ultrahigh electron mobility in suspended graphene". Solid State Communications. 146 (9): 351–355

Indium tin oxide (4,248 words) [view diff] exact match in snippet view article find links to article

dopants in indium oxide, particularly molybdenum, give much higher electron mobility and conductivity than obtained with tin. Doped binary compounds such

Cathy Foley (1,192 words) [view diff] exact match in snippet view article find links to article

1063/1.336906. ISSN 0021-8979. Tansley, T.L.; Foley, C.P. (1984). "Electron mobility in indium nitride". Electronics Letters. 20 (25–26). Institution of

Terahertz radiation (6,782 words) [view diff] no match in snippet view article find links to article

Far-infrared laser Full body scanner Heterojunction bipolar transistor High-electron-mobility transistor (HEMT) Picarin Terahertz time-domain spectroscopy Jones

Danielle George (1,680 words) [view diff] no match in snippet view article find links to article

Millimetre-wave radiometer development and characterisation Low noise high-electron-mobility transistor (HEMT) parameter extraction and modelling Cryogenic low-noise

Optical modulators using semiconductor nano-structures (1,361 words) [view diff] exact match in snippet view article find links to article

structure is based on the well-established technology for producing high electron mobility transistors where an electron gas is confined at a GaAs/AlxGa1 xAs

Surface-enhanced Raman spectroscopy (4,961 words) [view diff] exact match in snippet view article find links to article

materials for SERS applications. Graphene has a high surface area, high electron mobility, and excellent chemical stability, making it an attractive substrate

Gallium indium antimonide (626 words) [view diff] no match in snippet view article find links to article

"Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency

Quantum well (6,124 words) [view diff] exact match in snippet view article find links to article

transmitters, or in blue lasers. They are also used to make HEMTs (high electron mobility transistors), which are used in low-noise electronics. Quantum well

Direction finding (10,463 words) [view diff] exact match in snippet view article find links to article

example, the metal-semiconductor field-effect transistor and the high electron mobility transistor (HEMT). Initially, discrete transistors were embedded in

List of Indian inventions and discoveries (21,776 words) [view diff] case mismatch in snippet view article find links to article

scientists from Bangalore have developed a highly reliable, High Electron Mobility Transistor (HEMTs) that is a normally OFF device and can switch currents

Bruno Rossi (10,819 words) [view diff] exact match in snippet view article find links to article

very brief. With James S. Allen, Rossi found gas mixtures of high electron mobility and low electron attachment. On the basis of these investigations

Graphene spray gun (1,241 words) [view diff] exact match in snippet view article find links to article

graphene's distinctive properties, such as its high strength, high electron mobility, mechanical stiffness, and its ability to conduct both electricity

Alkali metal (23,537 words) [view diff] exact match in snippet view article find links to article

between s electrons and the partially filled d subshell that lower electron mobility." Chemically, the group 11 metals behave like main-group metals in

Post-transition metal (15,304 words) [view diff] exact match in snippet view article find links to article

between s electrons and the partially filled d subshell that lower electron mobility." Chemically, the group 11 metals in their +1 valence states show

Electronics and semiconductor manufacturing industry in India (8,554 words) [view diff] case mismatch in snippet view article find links to article

semiconductor foundry and fab because of their wide ranged use like High Electron Mobility Transistor (HEMT) made from GaN in power electronics both for civilian

Timeline of quantum computing and communication (19,157 words) [view diff] no match in snippet view article find links to article

amplifying signals from qubits, made of indium phosphide (InP) high-electron-mobility transistors (HEMTs). 21 December – Publication of research of "counterfactual

Aristos Christou (1,580 words) [view diff] exact match in snippet view article find links to article

electronics performance. His contributions also included vertical high electron mobility transistors based on nitride semiconductors utilizing the AlGaN/GaN

Indenofluorene (2,574 words) [view diff] exact match in snippet view article find links to article

lead to a herringbone crystal packing which is not favorable for electron mobility through the crystal. Similar to indeno [1,2 -b] fluorenes, see above

Ian F. Akyildiz (5,198 words) [view diff] no match in snippet view article find links to article

in where the basic idea is based on the integration of III-V High-Electron-Mobility Transistors (HEMT) with graphene in. In 2016, a US Patent is obtained

CfA 1.2 m Millimeter-Wave Telescope (3,768 words) [view diff] exact match in snippet view article find links to article

frequency (IF) signal that is further amplified with a low-noise high electron mobility field effect transistor (HEMT FET) amplifier, and passed to the IF

Boraacenes (2,835 words) [view diff] exact match in snippet view article find links to article

that favorable π-stacking interactions are still preserved to ensure electron mobility in the ring and compound stability within organic electronics. Synthesis

Renate Egan (2,012 words) [view diff] exact match in snippet view article find links to article

1058. Tansley TL; Egan RJ, 1993, 'Defects, optical absorption and electron mobility in indium and gallium nitrides', in Wide-Band-Gap Semiconductors,

Heat transfer physics (9,679 words) [view diff] exact match in snippet view article find links to article

transport (represented as σe) is a function of carrier density ne,c and electron mobility μe (σe = ecne,cμe). μe is determined by electron scattering rates

Potential applications of graphene (15,190 words) [view diff] exact match in snippet view article find links to article

that confines light and alters wavelengths. Due to extremely high electron mobility, graphene may be used for production of highly sensitive Hall effect

Polymer-fullerene bulk heterojunction solar cell (2,513 words) [view diff] exact match in snippet view article find links to article

molecule with a strong affinity for electrons, ensuring sufficient electron mobility between the two. The arrangement of materials essentially determines

Contorted aromatics (6,185 words) [view diff] exact match in snippet view article find links to article

donor and acceptors. The c-PDI dimers on the other hand show better electron mobility (~10−2 cm2 V−1 s−1), electron acceptability and almost similar LUMO

Graphene production techniques (10,670 words) [view diff] exact match in snippet view article find links to article

exfoliation produced graphene with the lowest number of defects and highest electron mobility. Andre Geim and Konstantin Novoselov initially used adhesive tape

List of fellows of IEEE Electron Devices Society (69 words) [view diff] exact match in snippet view article find links to article

silicon devices 2005 Phillip Smith For contributions to microwave high electron mobility transistors 2005 Juzer Vasi For leadership in microelectronics education