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Longer titles found: Current sense amplifier (view)

searching for Sense amplifier 17 found (23 total)

alternate case: sense amplifier

IBM 738 (80 words) [view diff] exact match in snippet view article find links to article

The IBM 738 was IBM's first core memory unit to use transistorized sense amplifier circuits. Designed in 1955 for the IBM 704, it used vacuum tubes for
XDR DRAM (1,885 words) [view diff] exact match in snippet view article find links to article
loaded into the bank's sense amplifier array. To save power, a chip may be configured to only activate a portion of the sense amplifier array. In this case
Synchronous dynamic random-access memory (8,748 words) [view diff] exact match in snippet view article find links to article
banks' sense amplifier rows and the data I/O pins. "Prefetch" and "restore" commands, unique to VCSDRAM, copy data between the DRAM's sense amplifier row
Static random-access memory (3,155 words) [view diff] exact match in snippet view article find links to article
and BL lines will have a small voltage difference between them. A sense amplifier will sense which line has the higher voltage and thus determine whether
1.5 μm process (349 words) [view diff] case mismatch in snippet view article find links to article
Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166.
Random-access memory (5,724 words) [view diff] case mismatch in snippet view article find links to article
Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166.
1 μm process (365 words) [view diff] case mismatch in snippet view article find links to article
Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166.
R8000 (1,879 words) [view diff] exact match in snippet view article find links to article
interconnect. BiCMOS circuitry was used in the decoders and combined sense amplifier and comparator portions of the chip to reduce cycle time. Each Tag
Analog Devices (3,584 words) [view diff] case mismatch in snippet view article find links to article
2010. Retrieved January 20, 2011. bNET. "Analog Devices’ Current Sense Amplifier Achieves Industry's Highest Accuracy for Industrial and Automotive
CMOS (6,229 words) [view diff] case mismatch in snippet view article find links to article
Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166.
CAS latency (1,071 words) [view diff] exact match in snippet view article find links to article
its corresponding vertical bit line. Each bit line is connected to a sense amplifier that amplifies the small voltage change produced by the storage capacitor
Bubble memory (3,992 words) [view diff] exact match in snippet view article find links to article
and signals from bits read in the bubble memory are amplified by the sense amplifier of the controller and they will reference the boot loop register to
Magnetoresistive RAM (5,286 words) [view diff] case mismatch in snippet view article find links to article
2013). "An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory". IEEE Journal of Solid-State
List of semiconductor scale examples (5,940 words) [view diff] case mismatch in snippet view article find links to article
Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166.
Ant colony optimization algorithms (9,502 words) [view diff] exact match in snippet view article find links to article
Ant colony optimization (ACO) based optimization of 45 nm CMOS-based sense amplifier circuit could converge to optimal solutions in very minimal time. Ant
Transistor count (10,140 words) [view diff] case mismatch in snippet view article find links to article
Jeffrey Carl (August 10, 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166.
Multiple patterning (7,206 words) [view diff] case mismatch in snippet view article find links to article
Proc. SPIE 9053, 90530T (2014). Application-Specific Lithography: Sense Amplifier and Sub-Wordline Driver Metal Patterning in DRAM "Scaling-driven nanoelectronics